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dc.contributor.authorMartínez Viviente, Félix Lorenzo 
dc.contributor.authorRuiz Merino, Ramón Jesús 
dc.contributor.authorPrado, A. del 
dc.contributor.authorSan Andrés, E. 
dc.contributor.authorMártil de la Plaza, Ignacio 
dc.contributor.authorGonzález Díaz, G. 
dc.contributor.authorJeynes, C. 
dc.contributor.authorBarradas, N.P. 
dc.contributor.authorWang, L. 
dc.contributor.authorReehal, H.S. 
dc.date.accessioned2008-11-17T08:55:11Z
dc.date.available2008-11-17T08:55:11Z
dc.date.issued2004
dc.identifier.citationMARTÍNEZ, F. L., RUIZ-MERINO, R., DEL PRADO, A., SAN ANDRÉS, E., MÁRTIL, I., GONZÁLEZ-DÍAZ, G., JEYNES, C., BARRADAS, N.P., WANG, L., REEHAL, H.S. Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method. En: Thin solid films, (459): pp. 203- 207, 2004. ISSN 0040-6090es
dc.identifier.issn0040-6090
dc.description.abstractThe bonding structure and hydrogen content of amorphous hydrogenated silicon nitride (a-SiNx:H) thin films have been investigated by infrared spectroscopy and ion beam techniques. Electron cyclotron resonance plasma enhanced chemical vapor deposition was used to produce these films under different values of gas flow ratio, deposition temperature, and microwave power. The amount of bonded hydrogen was calculated from the N-H and Si-H infrared absorption bands. An increase of the SiH4 partial pressure during deposition was found to have the same effect on the H content as an increase of the substrate temperature: both cause a decrease of the N-H bond density and an increase in the number of Si-H bonds. This is explained by a competitive process in the formation of N-H and Si-H bonds during the growth of the film, whereby Si-H bonds are favored at the expense of N-H bonds when either the SiH4 flow or the substrate temperature are increased. Such tendency to chemical order is compared with previous results in which the same behavior was induced by thermal annealing or ion beam bombardment.es
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dc.language.isoenges
dc.publisherElsevieres
dc.rightsPublicación original disponible en: http://www.sciencedirect.com/science?_ob=ArticleListURL&_method=list&_ArticleListID=825676143&_sort=d&view=c&_acct=C000053933&_version=1&_urlVersion=0&_userid=1595570&md5=414b6929d990a4ceed96e352ee1bc211es
dc.titleBonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma methodes
dc.typeinfo:eu-repo/semantics/articlees
dc.subject.otherElectrónicaes
dc.subjectHidrógenoes
dc.subjectSiliconaes
dc.identifier.urihttp://hdl.handle.net/10317/572
dc.identifier.doi10.1016/j.tsf.2003.12.084


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