%0 Journal Article 
%A Martínez Viviente, Félix Lorenzo
%A Toledano Luque, María
%A San Andrés, E.
%A Mártil de la Plaza, Ignacio
%A González Díaz, G.
%A Bohne, Wolfgang
%A Röhrich, J.
%A Strub, Erik
%T Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis
%D 2006
%U http://hdl.handle.net/10317/550
%X The composition of polycrystalline hafnium oxide thin films has been measured by heavy-ion
elastic recoil detection analysis (HI-ERDA). The films were deposited by high-pressure
reactive sputtering (HPRS) with oxygen plasma at pressures between 0.8 and 1.6 mbar and
during deposition times between 0.5 and 3.0 hours. Hydrogen was found to be the main
impurity and its concentration increased with deposition pressure. The composition was
always slightly oxygen-rich, which is attributed to the oxygen plasma. Additionally, an
interfacial silicon oxide thin layer was detected and taken into account. The thickness of the
hafnium oxide film was found to increase linearly with deposition time and to decrease
exponentially with deposition pressure, whereas the thickness of the silicon oxide interfacial
layer has a minimum as a function of pressure at around 1.2 mbar and increases slightly as a
function of time. The measurements confirmed that this interfacial layer is formed mainly
during the early stages of the deposition process.
%K Electrónica
%K Oxígeno
%K Óxido interfacial de silicio
%~ GOEDOC, SUB GOETTINGEN