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dc.contributor.authorWang, L. 
dc.contributor.authorReehal, H.S. 
dc.contributor.authorMartínez Viviente, Félix Lorenzo 
dc.contributor.authorSan Andrés, E. 
dc.contributor.authorPrado, A. del 
dc.date.accessioned2011-12-01T13:27:36Z
dc.date.available2011-12-01T13:27:36Z
dc.date.issued2003-05-21
dc.identifier.citationWANG, L. et al. Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique. En Semiconductor Science and Technology, 17 (7): pp. 633-641, mayo 2003. ISSN 0268-1242eng
dc.identifier.issn0268-1242
dc.description.abstractAmorphous hydrogenated silicon nitride films have been deposited by the electron cyclotron resonance plasma technique, using N2 and SiH4 as precursor gases. The gas flow ratio, deposition temperature and microwave power have been varied in order to study their effect on the properties of the films, which were characterized by Rutherford back-scattering spectrometry, elastic recoil detection analysis (ERDA), Fourier transform infrared spectroscopy, and ellipsometry. All samples show N/Si ratios near or above the stoichiometric value (N/Si=1.33). The hydrogen content determined from ERDA measurements is significantly higher than the amount detected by infrared spectroscopy, evidencing the presence of non bonded H. As the N2/SiH4 gas flow ratio is increased (by decreasing the SiH4 partial pressure), the Si content decreases and the N-H concentration increases, while the N content remains constant, resulting in an increase of the N/Si ratio. The decrease of the Si content causes a decrease of the refractive index and the density of the film, while the growth ratio also decreases due to the limiting factor of the SiH4 partial pressure. The infrared Si-N stretching band shifts to higher wavenumbers as the N-H concentration increases. The increase of deposition temperature promotes the release of H, resulting in a higher incorporation of N and Si into the film and a decrease of the N/Si ratio. The effect of increasing the microwave power is analogous to increasing the N2/SiH4 ratio, due to the increase in the proportion of nitrogen activated species.eng
dc.formatapplication/pdfeng
dc.language.isoengeng
dc.publisherIOP Publishingeng
dc.rightsLicencia Creative Commonseng
dc.titleCharacterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma techniqueeng
dc.typeinfo:eu-repo/semantics/articleeng
dc.subject.otherElectrónicaeng
dc.subjectSemiconductoreseng
dc.subjectNitruro de silicioeng
dc.identifier.urihttp://hdl.handle.net/10317/1964
dc.peerreviewSi.eng
dc.identifier.doidoi:10.1088/0268-1242/18/7/306
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesseng
dc.type.versioninfo:eu-repo/semantics/acceptedVersioneng


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