Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique
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Bibliographic CitationWANG, L. et al. Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique. En Semiconductor Science and Technology, 17 (7): pp. 633-641, mayo 2003. ISSN 0268-1242
Nitruro de silicio
Amorphous hydrogenated silicon nitride films have been deposited by the electron cyclotron resonance plasma technique, using N2 and SiH4 as precursor gases. The gas flow ratio, deposition temperature and microwave power have been varied in order to study their effect on the properties of the films, which were characterized by Rutherford back-scattering spectrometry, elastic recoil detection analysis (ERDA), Fourier transform infrared spectroscopy, and ellipsometry. All samples show N/Si ratios near or above the stoichiometric value (N/Si=1.33). The hydrogen content determined from ERDA measurements is significantly higher than the amount detected by infrared spectroscopy, evidencing the presence of non bonded H. As the N2/SiH4 gas flow ratio is increased (by decreasing the SiH4 partial pressure), the Si content decreases and the N-H concentration increases, while the N content remains constant, resulting in an increase of the N/Si ratio. The decrease of the Si content causes a decrease ...
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