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dc.contributor.authorMartínez Viviente, Félix Lorenzo 
dc.contributor.authorToledano Luque, María 
dc.contributor.authorSan Andrés, E. 
dc.contributor.authorMártil de la Plaza, Ignacio 
dc.contributor.authorGonzález Díaz, G. 
dc.contributor.authorBohne, Wolfgang 
dc.contributor.authorRöhrich, J. 
dc.contributor.authorStrub, Erik 
dc.date.accessioned2008-11-03T12:22:24Z
dc.date.available2008-11-03T12:22:24Z
dc.date.issued2006
dc.identifier.citationMARTÍNEZ, F. L., Toledano, M., San Andrés, E., Mártil, I., González-Díaz, G., Bohne, W., Röhrich, J., Strub, E. Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis. En: Thin solid films, (515): pp. 695- 699, 2006. ISSN 0040-6090es
dc.identifier.isbn0040-6090
dc.description.abstractThe composition of polycrystalline hafnium oxide thin films has been measured by heavy-ion elastic recoil detection analysis (HI-ERDA). The films were deposited by high-pressure reactive sputtering (HPRS) with oxygen plasma at pressures between 0.8 and 1.6 mbar and during deposition times between 0.5 and 3.0 hours. Hydrogen was found to be the main impurity and its concentration increased with deposition pressure. The composition was always slightly oxygen-rich, which is attributed to the oxygen plasma. Additionally, an interfacial silicon oxide thin layer was detected and taken into account. The thickness of the hafnium oxide film was found to increase linearly with deposition time and to decrease exponentially with deposition pressure, whereas the thickness of the silicon oxide interfacial layer has a minimum as a function of pressure at around 1.2 mbar and increases slightly as a function of time. The measurements confirmed that this interfacial layer is formed mainly during the early stages of the deposition process.es
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dc.language.isoenges
dc.publisherElsevieres
dc.rightsPublicación original disponible en: http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TW0-4J2TSD3-H&_user=1595570&_rdoc=1&_fmt=&_orig=search&_sort=d&view=c&_version=1&_urlVersion=0&_userid=1595570&md5=7e8a596a5e934d717ae0b62ee200b98e
dc.titleCompositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysises
dc.typeinfo:eu-repo/semantics/articlees
dc.subject.otherElectrónicaes
dc.subjectOxígenoes
dc.subjectÓxido interfacial de silicioes
dc.identifier.urihttp://hdl.handle.net/10317/550
dc.identifier.doidoi:10.1016/j.tsf.2005.12.239


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