Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis
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AuthorMartínez Viviente, Félix Lorenzo; Toledano Luque, María; San Andrés, E.; Mártil de la Plaza, Ignacio; González Díaz, G.; [et al.]
Bibliographic CitationMARTÍNEZ, F. L., Toledano, M., San Andrés, E., Mártil, I., González-Díaz, G., Bohne, W., Röhrich, J., Strub, E. Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis. En: Thin solid films, (515): pp. 695- 699, 2006. ISSN 0040-6090
Óxido interfacial de silicio
The composition of polycrystalline hafnium oxide thin films has been measured by heavy-ion elastic recoil detection analysis (HI-ERDA). The films were deposited by high-pressure reactive sputtering (HPRS) with oxygen plasma at pressures between 0.8 and 1.6 mbar and during deposition times between 0.5 and 3.0 hours. Hydrogen was found to be the main impurity and its concentration increased with deposition pressure. The composition was always slightly oxygen-rich, which is attributed to the oxygen plasma. Additionally, an interfacial silicon oxide thin layer was detected and taken into account. The thickness of the hafnium oxide film was found to increase linearly with deposition time and to decrease exponentially with deposition pressure, whereas the thickness of the silicon oxide interfacial layer has a minimum as a function of pressure at around 1.2 mbar and increases slightly as a function of time. The measurements confirmed that this interfacial layer is formed mainly during ...
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